An amplifier consisting of an electron-gun modulation system, semiconductor target and output coupling network all within a glass or ceramic envelope.

The semiconductor target is a pair of silicon diodes, each consisting of two metallic electrodes with a pn (positive-negative) junction under the top contact.

A pn junction or a diode (one way valve) is a pn junction with p-type (positive-type) on one side and n-type (negative-type) on the other side.

When a positive voltage is applied to the p-type side (forward bias), it shrinks and overcomes the depletion zone, causing the current to flow from the p-type to the n-type side. When a negative voltage is applied to the p-type of the diode (reverse bias), it increases the depletion zone and prevents current from flowing.

The amplifier operation is based on the fact that a modulated electron beam can control the current in a reverse-based semiconductor junction.